DocumentCode
2251171
Title
Characterisation of an InAs quantum dot semiconductor disk laser
Author
Schlosser, Peter ; Calvez, Stephane ; Hastie, Jennifer E. ; Jin, Shirong ; Germann, Tim D. ; Strittmatter, Andre ; Pohl, Udo W. ; Bimberg, Dieter ; Dawson, Martin D.
Author_Institution
Wolfson Centre, Univ. of Strathclyde, Glasgow
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We report the performance of a 1030 nm semiconductor disk laser with gain region consisting of multiple sub-monolayers of InAs/GaAs quantum dots. Maximum output power of 512 mW was achieved with 20% slope efficiency.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs; disk laser; multiple submonolayers; power 512 mW; quantum dot laser; quantum dots; semiconductor laser; wavelength 1030 nm; Optical surface waves; Power generation; Power lasers; Pump lasers; Quantum dot lasers; Resonance; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.7260) Vertical cavity surface emitting lasers; (250.5590) Quantum-well, -wire and -dot devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572092
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