Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

Author

Hoogland, Sjoerd ; Garnache, Arnaud ; Wilcox, Keith G. ; Mihoubi, Zakaria ; Elsmere, Stephen ; Quarterman, Adrian ; Tropper, Anne

Author_Institution

Dept of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; InGaAs-GaAsP; InGaAs/GaAsP quantum well laser; VECSEL; spectral condensation; spectrotemporal gain bandwidth measurement; surface-emitting semiconductor laser; vertical-external-cavity laser; Bandwidth; Extraterrestrial measurements; Gain measurement; Indium gallium arsenide; Laser mode locking; Laser modes; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers; (140.7270); Vertical emitting lasers, (320.7130);

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572093