DocumentCode
2251275
Title
Voltage reference using mutual compensation of mobility and threshold voltage temperature effects
Author
Filanovsky, I.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Volume
5
fYear
2000
fDate
2000
Firstpage
197
Abstract
Mutual compensation of mobility and threshold voltage temperature variations results in a temperature stable bias point of a n-MOS transistor. This effect is used in the proposed voltage reference circuit. The circuit includes an operational amplifier that provides biasing of a diode-connected MOS transistor to the mentioned above point of temperature compensation. Then the voltage at this point is used as the reference voltage setting the operational amplifier output voltage used for the transistor bias
Keywords
MOSFET circuits; carrier mobility; compensation; reference circuits; carrier mobility; diode connected MOS transistor; operational amplifier; temperature compensation; threshold voltage; voltage reference circuit; CMOS technology; Circuits; Diodes; Equations; FETs; MOSFETs; Operational amplifiers; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857397
Filename
857397
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