DocumentCode
2251280
Title
A fast and simplified technique of proximity effect correction for ULSI patterns in electron-beam projection lithography
Author
Ogino, K. ; Hoshino, H. ; Machida, Y. ; Osawa, M. ; Takahashi, K. ; Arimoto, H.
Author_Institution
Fujitsu Ltd., Kawasaki, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
254
Lastpage
255
Abstract
We have proposed a proximity effect correction algorithm using the pattern shape modification method and the interior area removal method, and have applied this algorithm to ULSI patterns.
Keywords
ULSI; electron beam lithography; proximity effect (lithography); semiconductor process modelling; EPL proximity effect correction algorithm; ULSI patterns; back scattering; electron-beam projection lithography; forward scattering; interior area removal method; pattern shape modification method; Convergence; Laboratories; Lithography; Nonlinear equations; Page description languages; Parallel processing; Proximity effect; Scattering; Shape; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984185
Filename
984185
Link To Document