Title :
Electrical characterization of AIN/Si(111) interface
Author :
Tseng, C.Y. ; Lien, W.C. ; Wang, Y.N. ; Chen, N.C.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
Abstract :
This work investigates the interface of AlN/Si(111l) by Hall and thermal electrical measurement. The results show that a p-type conducting layer was unintentionally formed at the interface.
Keywords :
Hall effect; III-V semiconductors; elemental semiconductors; interface structure; semiconductor thin films; silicon; thermoelectricity; wide band gap semiconductors; AIN/Si(111) interface; AlN-Si; Hall measurement; p-type conducting layer; thermal electrical measurement; Dielectric thin films; Electric resistance; Electric variables measurement; Hot carriers; Optical films; Probes; Pulse measurements; Substrates; Thermoelectricity; Voltage;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391715
