Title :
1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition
Author :
Kushibe, M. ; Hashimoto, R. ; Ezaki, M. ; Managaki, N. ; Hatakoshi, G. ; Nishioka, M. ; Arakawa, Y.
Author_Institution :
Adv. Electron Devices Lab., Toshiba Corp., Kawasaki
Abstract :
Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 μm with threshold current density of 0.4 kA/cm2 by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 μm with using a thin p-clad layer.
Keywords :
III-V semiconductors; MOCVD; current density; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.3-μm continuous wave lasing; InAs; metal-organic chemical vapor deposition; quantum dots; temperature 293 K to 298 K; thin p-clad layer; threshold current density; wavelength 1.3 micron; Chemical vapor deposition; Diode lasers; Gallium arsenide; MOCVD; Nitrogen; Quantum dots; Research and development; Substrates; Surface emitting lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391722
