• DocumentCode
    2251710
  • Title

    1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition

  • Author

    Kushibe, M. ; Hashimoto, R. ; Ezaki, M. ; Managaki, N. ; Hatakoshi, G. ; Nishioka, M. ; Arakawa, Y.

  • Author_Institution
    Adv. Electron Devices Lab., Toshiba Corp., Kawasaki
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 μm with threshold current density of 0.4 kA/cm2 by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 μm with using a thin p-clad layer.
  • Keywords
    III-V semiconductors; MOCVD; current density; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.3-μm continuous wave lasing; InAs; metal-organic chemical vapor deposition; quantum dots; temperature 293 K to 298 K; thin p-clad layer; threshold current density; wavelength 1.3 micron; Chemical vapor deposition; Diode lasers; Gallium arsenide; MOCVD; Nitrogen; Quantum dots; Research and development; Substrates; Surface emitting lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391722
  • Filename
    4391722
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2251710