• DocumentCode
    2251751
  • Title

    Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2 and Si

  • Author

    La Via, F. ; Aberti, A. ; Raineri, V. ; Ravesi, S. ; Rimini, E.

  • Author_Institution
    Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    181
  • Lastpage
    183
  • Abstract
    In this paper we studied the influence of the dopant and of the polysilicon substrate on the thermal stability of a thin CoSi/sub 2/ layer. To distinguish between the influence of the dopant (As or B) and the effect of the implant in the silicon substrate, also an implantation of silicon was performed on a different sample. A large difference in the silicide thermal stability has been observed and this behavior has been explained with the crystallographic orientation of the underlying silicon substrate and of the silicide layer.
  • Keywords
    cobalt compounds; ion implantation; metallic thin films; thermal stability; CoSi/sub 2/-Si; CoSi/sub 2/-Si:As; CoSi/sub 2/-Si:BF/sub 2/; crystallographic orientation; dopant implantation; polysilicon substrate; silicide layer; thermal stability; Annealing; Atomic measurements; Cobalt; Electrical resistance measurement; Force measurement; Silicides; Silicon; Substrates; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621112
  • Filename
    621112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2251751