DocumentCode
2251804
Title
Near-infrared nano-imaging spectroscopy of semiconductor quantum dots using a phase change mask layer
Author
Tsumori, Nobuhiro ; Takahashi, Motoki ; Saiki, Toshiharu
Author_Institution
Grad. Sch. of Sci. & Technol., Keio Univ., Yokohama, Japan
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We proposed a near-infrared nano-imaging spectroscopy of semiconductor quantum structures using a phase change mask layer. The performance of this method was demonstrated by numerical simulation and photoluminescence measurement of quantum dots.
Keywords
III-V semiconductors; finite difference time-domain analysis; indium compounds; infrared spectroscopy; masks; nanophotonics; optical images; photoluminescence; semiconductor quantum dots; InAs-InP; near-infrared nanoimaging spectroscopy; numerical simulation; phase change mask layer; photoluminescence measurement; semiconductor quantum dots; Apertures; Optical films; Optical pulses; Phase change materials; Quantum dots; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5951092
Link To Document