• DocumentCode
    2251921
  • Title

    On-chip dual-ring-oscillator-based random-fluctuation-measurement method for detecting lowest voltage in adaptive voltage scaling systems

  • Author

    Ono, Goichi ; Owa, Misa ; Nakayama, Makoto ; Kanno, Y.

  • Author_Institution
    Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
  • fYear
    2012
  • fDate
    12-14 Nov. 2012
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    A fully digital 40-nm-CMOS-based sensor using dual-ring oscillators for detecting random device fluctuation was developed. The sensor detects threshold voltage fluctuation of a MOSFET with precision of 1 mV with ±10% accuracy by calculating the squared sum of the differences in frequencies of the two ring oscillators. This sensing method does not require reference signals and achieves a smaller layout area than that of a conventional analog sensor.
  • Keywords
    CMOS integrated circuits; MOSFET; oscillators; sensors; voltage measurement; MOSFET; adaptive voltage scaling systems; analog sensor; fully digital CMOS-based sensor; lowest voltage detection; on-chip dual-ring-oscillator-based random fluctuation-measurement method; random device fluctuation detection; size 40 nm; threshold voltage fluctuation; voltage 1 mV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
  • Conference_Location
    Kobe
  • Type

    conf

  • DOI
    10.1109/IPEC.2012.6522639
  • Filename
    6522639