DocumentCode
2251921
Title
On-chip dual-ring-oscillator-based random-fluctuation-measurement method for detecting lowest voltage in adaptive voltage scaling systems
Author
Ono, Goichi ; Owa, Misa ; Nakayama, Makoto ; Kanno, Y.
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fYear
2012
fDate
12-14 Nov. 2012
Firstpage
109
Lastpage
112
Abstract
A fully digital 40-nm-CMOS-based sensor using dual-ring oscillators for detecting random device fluctuation was developed. The sensor detects threshold voltage fluctuation of a MOSFET with precision of 1 mV with ±10% accuracy by calculating the squared sum of the differences in frequencies of the two ring oscillators. This sensing method does not require reference signals and achieves a smaller layout area than that of a conventional analog sensor.
Keywords
CMOS integrated circuits; MOSFET; oscillators; sensors; voltage measurement; MOSFET; adaptive voltage scaling systems; analog sensor; fully digital CMOS-based sensor; lowest voltage detection; on-chip dual-ring-oscillator-based random fluctuation-measurement method; random device fluctuation detection; size 40 nm; threshold voltage fluctuation; voltage 1 mV;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
Conference_Location
Kobe
Type
conf
DOI
10.1109/IPEC.2012.6522639
Filename
6522639
Link To Document