Title :
On-chip dual-ring-oscillator-based random-fluctuation-measurement method for detecting lowest voltage in adaptive voltage scaling systems
Author :
Ono, Goichi ; Owa, Misa ; Nakayama, Makoto ; Kanno, Y.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
A fully digital 40-nm-CMOS-based sensor using dual-ring oscillators for detecting random device fluctuation was developed. The sensor detects threshold voltage fluctuation of a MOSFET with precision of 1 mV with ±10% accuracy by calculating the squared sum of the differences in frequencies of the two ring oscillators. This sensing method does not require reference signals and achieves a smaller layout area than that of a conventional analog sensor.
Keywords :
CMOS integrated circuits; MOSFET; oscillators; sensors; voltage measurement; MOSFET; adaptive voltage scaling systems; analog sensor; fully digital CMOS-based sensor; lowest voltage detection; on-chip dual-ring-oscillator-based random fluctuation-measurement method; random device fluctuation detection; size 40 nm; threshold voltage fluctuation; voltage 1 mV;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
Conference_Location :
Kobe
DOI :
10.1109/IPEC.2012.6522639
