Development of F2 exposure tools

Author

Owa, S. ; Shiraishi, N. ; Omura, Y. ; Aoki, T. ; Matsumoto, Y. ; Hatasawa, M. ; Mori, T. ; Tanaka, I.

Author_Institution

IC Equip. Div., Nikon Corp., Tokyo, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

308

Abstract

Summary form only given. ArF lithography (wavelength 193 nm) is expected to start its mass-production stage at this time. It will cover the 100 nm resolution node and will extend to near 80 nm. F2 lithography (wavelength 157 nm) is expected to come next; it is the technology that realizes both high throughput (comparable to ArF) and high resolution below 70 nm at the same time. F2 exposure tools have similar structure to ArF tools; but there are significant differences in optics, materials and mechanical structures.

Keywords

fluorine; integrated circuit manufacture; laser materials processing; nanotechnology; ultraviolet lithography; 157 nm; 70 nm; DUV lithography; F/sub 2/; F/sub 2/ lasers; F2 exposure tools; birefringence; deep UV lithography; high resolution; high throughput; materials; mechanical structures; optics design; Birefringence; Coatings; Lenses; Lithography; Open wireless architecture; Optical design; Optical materials; Stimulated emission; Surface emitting lasers; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984212

Filename

984212

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2251938