A study of 157 nm resist design by using highly precise theoretical calculation of absorption spectra

Author

Yamazaki, Tamio ; Itani, Toshiro

Author_Institution

Semicond. Leading Edge Technologies Inc, Yokohama, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

310

Lastpage

311

Abstract

Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157 nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several saturated hydrocarbons. It was found that SAC-CI calculations are quite close to the experimental values of absorption peak positions, and it has enough precision qualitatively to compare the absorption coefficient among different molecules. High precision prediction enables exact assignment of an absorption spectrum. It was found that SAC-CI calculation is very useful for the development of resist polymers and other component for 157 nm resists.

Keywords

photoresists; polymer films; ultraviolet lithography; ultraviolet spectra; 157 nm; DUV resist materials; SAC-Cl calculations; VUV absorption spectra; absorption coefficient; absorption peak positions; resist design; resist polymers; saturated hydrocarbons; symmetry adapted cluster configuration interaction; vacuum ultraviolet spectra; Accuracy; Electromagnetic wave absorption; Equations; Gaussian processes; Lead compounds; Lithography; Optical materials; Polymers; Resists; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984213

Filename

984213