DocumentCode
2251999
Title
Evaluation of high transmittance attenuated phase shifting mask for 157 nm lithography
Author
Yamabe, O. ; Watanabe, K. ; Itani, T.
Author_Institution
Adv. Technol. Res. Dept, Semicond. Leading Edge Technol. Inc, Yokohama, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
312
Lastpage
313
Abstract
Resolution enhancement techniques (RETs) such as attenuated phase shifting mask (Att-PSM) and alternated phase shifting mask (Alt-PSM) are the hopeful art to realize 70 nm node 157 nm lithography. In particular, Att-PSM has advantage for applying various circuit design to ULSI devices. In this paper, we have evaluated a high transmittance Att-PSM in both aerial image simulation and experiment. As a result, optimum transmittance of Att-PSM was obtained and the resolution improvement was confirmed.
Keywords
ULSI; integrated circuit technology; phase shifting masks; ultraviolet lithography; 157 nm; 70 nm; DUV lithography; ULSI fabrication; aerial image simulation; attenuated phase shifting mask; deep UV lithography; high transmittance attenuated PSM; optimum transmittance; resolution enhancement techniques; Apertures; Art; Circuit simulation; Circuit synthesis; Image resolution; Lead compounds; Lighting; Lithography; Scanning electron microscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984214
Filename
984214
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