Title :
Directional ejection of liquid droplets through sectoring half-wave-band sources of self-focusing acoustic transducer
Author :
Jae Wan Kwon ; Qiang Zou ; Eun Sok Kim
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
This paper describes a technique to produce liquid droplets in almost any direction with a Self Focusing Acoustic Transducer (SFAT) built on a thin low stress silicon nitride diaphragm with a piezoelectric ZnO film and patterned electrodes. Sectoring of the SFAT annular-rings, half-wave-band sources (to create a piezoelectrically inactive area) causes the droplet ejections to be nonperpendicular to the liquid surface. The direction of the droplet ejections depends on the size of the open area (i.e. the piezoelectrically inactive area) within the circular area of the half-wave-band sources. Droplets are ejected from the center part of the annular rings toward the open inactive area. Various openings of pie shape (up to 90/spl deg/) have been made and tested to show that the ejection direction becomes less vertical as the piezoelectrically inactive area in the transducer increases.
Keywords :
drops; ink jet printers; piezoelectric transducers; radiation pressure; ultrasonic applications; ultrasonic focusing; ultrasonic transducers; 600 MHz; Si/sub 3/N/sub 4/-ZnO; annular rings; directional ejection; droplet ejection direction; ink-jet printing; intensified acoustic radiation pressure; liquid droplets; patterned electrodes; pie shape openings; piezoelectric ZnO film; piezoelectrically inactive area; sectored Fresnel rings; sectoring half-wave-band sources; self-focusing acoustic transducer; thin low stress Si/sub 3/N/sub 4/ diaphragm; Acoustic transducers; Electrodes; Piezoelectric films; Piezoelectric transducers; Semiconductor films; Shape; Silicon; Stress; Testing; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984219