New bulk accelerometer for triaxial detection

Author

Plaza, J.A. ; Chen, H. ; Esteve, J.

Author_Institution

Centro Nacional de Microelectron., CSIC, Bellaterra, Spain

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1231

Abstract

A new structure for a piezoresistive triaxial accelerometer has been designed and fabricated. The FEM simulations shows a null cross sensitivity for the x and y detection and a very low level one for the z direction, <1.6%. The metal lines and the thickness of the passivation silicon oxide layers have been reduced to decrease stresses in the devices. The technology for the devices is a combination of bulk and surface micromachining based on commercial BESOI wafers

Keywords

accelerometers; bridge instruments; finite element analysis; micromachining; microsensors; passivation; piezoresistive devices; semiconductor device metallisation; silicon-on-insulator; BESOI wafers; FEM simulations; Si-SiO₂; Wheatstone bridges; bulk accelerometer; bulk micromachining; metal lines; null cross sensitivity; passivation SiO₂ layer thickness reduction; piezoresistive triaxial accelerometer; stress decrease; surface micromachining; triaxial detection; Acceleration; Accelerometers; Bridge circuits; Fabrication; Micromachining; Navigation; Piezoresistance; Resistors; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635448

Filename

635448