• DocumentCode
    2252248
  • Title

    A direct plasma etch approach to high aspect ratio polymer micromachining with applications in bioMEMS and CMOS-MEMS

  • Author

    Zahn, J.D. ; Gabriel, K.J. ; Fedder, G.K.

  • Author_Institution
    Dept. of Bioeng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2002
  • fDate
    24-24 Jan. 2002
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    A novel etching approach to high aspect ratio polymer micromachining is introduced. A switching chemistry utilizing oxygen as an etchant gas with a C/sub 4/F/sub 8/ passivation step has produced high aspect ratio polymer structures. Polymer layers have been bound to a mechanical silicon support, patterned and etched. The silicon is subsequently undercut creating suspended polymer membranes. The polymer microstructures have also been aligned with CMOS MEMS structures in a process compatible with post CMOS micromachining. All steps in the polymer micromachining and post CMOS release are compatible with standard MEMS processing equipment. This approach holds great promise for creating devices with CMOS electronics as sensors and actuators and aligned polymer microstructures serving as integrated fluidic conduits for bioMEMS and micro total analysis systems.
  • Keywords
    CMOS integrated circuits; micromachining; micromechanical devices; polymer films; sputter etching; C/sub 4/F/sub 8/ passivation step; CMOS-MEMS; O/sub 2/; Si; bioMEMS; direct plasma etch approach; high aspect ratio polymer micromachining; integrated fluidic conduits; mechanical silicon support; micro total analysis systems; oxygen etchant gas; post CMOS micromachining; post CMOS release; suspended polymer membranes; switching chemistry; undercut structures; CMOS process; Etching; Micromachining; Micromechanical devices; Microstructure; Passivation; Plasma applications; Plasma chemistry; Polymers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7185-2
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2002.984223
  • Filename
    984223