Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Author

Futai, N. ; Matsumoto, K. ; Shimoyama, I.

Author_Institution

Dept. of Mechano-Informatics, The Univ. of Tokyo, Japan

fYear

2002

fDate

24-24 Jan. 2002

Firstpage

168

Lastpage

171

Abstract

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 /spl mu/m or higher, and had aspect ratio of over one.

Keywords

X-ray diffraction; dielectric losses; ferroelectric thin films; lead compounds; micromechanical devices; permittivity; photoresists; sol-gel processing; thick films; 20 micron; MEMS; PZT; PbZrO3TiO3; Pt-Ti-Si; SU-8 photoresist; Si; XRD patterns; aspect ratio; crack-free structures; crystallinity; dielectric loss; ferroelectric properties; gel lapping; high-aspect-ratio PZT thick film structure; platinized Si substrates; rapid firing; relative permittivity; single coating; sol-gel technique; Coatings; Crystallization; Dielectric losses; Dielectric substrates; Fabrication; Lapping; Resists; Silicon; Thick films; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Conference_Location

Las Vegas, NV, USA

ISSN

1084-6999

Print_ISBN

0-7803-7185-2

Type

conf

DOI

10.1109/MEMSYS.2002.984231

Filename

984231