DocumentCode
2252553
Title
Optically pumped room temperature InAs/InGaAsP microtube laser operating near 1.55 μm
Author
Bianucci, P. ; Mukherjee, S. ; Poole, P. ; Mi, Z.
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We present an optically pumped InGaAsP microtube laser operating in the 1.64 μm wavelength range with InAs quantum dots as the gain medium. We observe room temperature continuous wave operation and a 4 μW threshold.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; optical pumping; quantum dot lasers; semiconductor quantum dots; InAs-InGaAsP; continuous wave operation; gain medium; microtube laser; optical pumping; quantum dots; temperature 293 K to 298 K; tube resonators; wavelength 1.64 mum; Laser modes; Optical device fabrication; Optical pumping; Optical resonators; Quantum dot lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5951118
Link To Document