Title :
Carrier dynamics in catastrophic optical bulk damaged InGaAs-AlGaAs strained QW broad-area lasers
Author :
Sin, Yongkun ; LaLumondiere, Stephen ; Lotshaw, William T. ; Ives, Neil ; Moss, Steven C.
Author_Institution :
Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA
Abstract :
We investigated catastrophic optical bulk damage in high power broad-area InGaAs strained quantum well lasers with windowed n-contacts using time-resolved EL and transient PL techniques.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electroluminescence; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; InGaAs-AlGaAs; carrier dynamics; catastrophic optical bulk damage; strained quantum well broad-area lasers; time-resolved electroluminescence; time-resolved transient photoluminescence; windowed n-contacts; Diode lasers; Optical imaging; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
