Er doped As2S3 photoresist for 3-D direct laser fabrication of 3-D nanostructures

Author

Wong, Sean ; Von Freymann, Georg ; Fenske, Dieter ; Kiowski, Oliver ; Kappes, Manfred ; Peiris, Frank ; Lindner, Jörg ; Ozin, Geoffrey A. ; Thiel, Michael ; Braun, Markus ; Ledermann, Alexandra ; Wegener, Martin

Author_Institution

Inst. fur Nanotechnol., Forschungszentrum Karlsruhe in der Helmholtz-Geminshaft, Karlsruhe

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We present a novel high-index-of-refraction (2.45) photoresist material based on erbium doped arsenic trisulfide. It shows room temperature photoluminescence at 1.5 microns wavelength, and can directly be used for direct laser writing.

Keywords

arsenic compounds; erbium; erbium compounds; laser materials processing; nanolithography; nanostructured materials; optical fabrication; optical materials; photoluminescence; photoresists; refractive index; 3D direct laser writing; 3D nanostructures; As₂S₃:Er; erbium doped arsenic trisulfide; high-index-of-refraction material; laser fabrication; photoluminescence; photoresist material; temperature 293 K to 298 K; wavelength 1.5 mum; Doping; Erbium; Nanostructured materials; Nanostructures; Optical films; Optical materials; Photoluminescence; Refractive index; Resists; Transistors; (160.4236) Nanomaterials; (160.5335) Photosensitive materials; (160.5690) Rare-earth-doped materials;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572155