DocumentCode
2252731
Title
Impact of random dopant induced statistical variability on inverter switching trajectories and timing variability
Author
Kamsani, Noor Ain ; Cheng, Binjie ; Roy, Scott ; Asenov, Asen
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2009
fDate
24-27 May 2009
Firstpage
577
Lastpage
580
Abstract
In this paper we study the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of an inverter at the 45 nm technology generation using statistical circuit simulation. The impact of the variability on switching trajectories and propagation delay are studied using an inverter chain with differing Fan-Out/Fan-In (FO/FI) ratios.
Keywords
logic circuits; logic gates; statistics; fan-out/fan-in ratios; inverter switching timing variability; inverter switching trajectories variability; random dopant induced statistical variability; statistical circuit simulation; Calibration; Circuit simulation; Circuits and systems; Doping profiles; Inverters; MOSFET circuits; Propagation delay; Semiconductor process modeling; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3827-3
Electronic_ISBN
978-1-4244-3828-0
Type
conf
DOI
10.1109/ISCAS.2009.5117814
Filename
5117814
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