DocumentCode
2252837
Title
A 34.8%-PAE CMOS transmitter frontend for 24-GHz FMCW radar applications
Author
Huan-Sheng Chen ; Liang-Hung Lu
Author_Institution
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2012
fDate
12-14 Nov. 2012
Firstpage
265
Lastpage
268
Abstract
A high-efficiency transmitter frontend circuit suitable for 24-GHz frequency-modulated continuous-wave (FMCW) radar applications is presented in this paper. In addition to the power amplifier (PA) stage, a voltage-controlled oscillator (VCO) is incorporated in the frontend for frequency modulation while a VCO buffer and a driving amplifier (DA) are utilized to provide an adequate driving level and reverse isolation. To take full advantage of the power available from the transistors, both the PA and DA stages are matched to the near-optimum impedances suggested by the load-pull simulation. Moreover, a positive-feedback technique is employed in the PA design for further efficiency enhancement. The proposed circuit is fabricated in a standard 90-nm CMOS process. Operated at a supply voltage of 1.2-V, the 24-GHz frontend demonstrates a peak power-added efficiency (PAE) of 34.8% with a peak output power of 16.3 dBm.
Keywords
CMOS analogue integrated circuits; CW radar; FM radar; frequency modulation; voltage-controlled oscillators; DA; FMCW radar application; PA stage; PAE CMOS transmitter frontend; VCO buffer; driving amplifier; driving level; frequency 24 GHz; frequency-modulated continuous-wave radar applications; high-efficiency transmitter frontend circuit; load-pull simulation; positive-feedback technique; power amplifier stage; power-added efficiency; reverse isolation; voltage 1 V to 2 V; voltage 1.2 V; voltage-controlled oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
Conference_Location
Kobe
Type
conf
DOI
10.1109/IPEC.2012.6522676
Filename
6522676
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