• DocumentCode
    2252943
  • Title

    Piezoelectric microspeaker with compressive nitride diaphragm

  • Author

    Seung Hwan Yi ; Eun Sok Kim

  • Author_Institution
    Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
  • fYear
    2002
  • fDate
    24-24 Jan. 2002
  • Firstpage
    260
  • Lastpage
    263
  • Abstract
    A diaphragm-based piezoelectric microspeaker has been fabricated with compressive nitride films, and compared to commercial speakers. The largest sound pressure level (SPL) produced by the fabricated microspeaker is 92 dB (when measured 2 mm away from the microspeaker in open field) at around 3 kHz for 6 V/sub peak-to-peak/ input. The microspeaker produces a comparable sound output to a commercial piezo-ceramic or electrodynamic speaker used in current cellular phones. The key to this success is the usage of a diaphragm that has a very high compressive residual stress, high enough to cause the diaphragm to be wrinkled. And the flatness of the active area in the speaker diaphragm is maintained through a mild tensile stress in the electrode layers, though the non-active area is wrinkled. This way, we produce a large diaphragm deflection (without being hindered by the diaphragm stretching effect) with good control over a flat, active area where the electromechanical transduction is happening.
  • Keywords
    diaphragms; internal stresses; loudspeakers; piezoelectric transducers; 3 kHz; 6 V; active area; compressive nitride diaphragm; compressive residual stress; electrode layers; electromechanical transduction; piezoelectric microspeaker; sound pressure level; stretching effect; tensile stress; Acoustic transducers; Cellular phones; Compressive stress; Electrodes; Electrodynamics; Loudspeakers; Micromechanical devices; Microphones; Piezoelectric films; Piezoelectric transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-7185-2
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2002.984252
  • Filename
    984252