DocumentCode
2253091
Title
Design and fabrication of an integrated programmable floating-gate microphone
Author
Tengge Ma ; Tsz Yin Man ; Yick Chuen Chan ; Yitshak Zohar ; Man Wong
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear
2002
fDate
24-24 Jan. 2002
Firstpage
288
Lastpage
291
Abstract
An integrated, programmable floating-gate capacitive microphone has been designed and fabricated. The conducting floating-gate is electrically insulated and is "programmed" by injecting electrons into it using Fowler-Nordheim tunneling through a thin silicon dioxide film, thus capable of simulating an electret and generating a permanent electric field. A current-driving buffer based on metal-oxide-semiconductor field-effect transistors is integrated to reduce the capacitive loading of the microphone. The fabrication process is MOS compatible and promises the potential of integrating a variety of signal processing electronic circuits.
Keywords
MOSFET circuits; buffer circuits; capacitive sensors; electrets; microphones; programmable circuits; tunnelling; Fowler-Nordheim tunneling; MOS compatible fabrication process; MOSFET; current-driving buffer; electret; electric field; electron injection; integrated programmable floating-gate capacitive microphone; signal processing electronic circuit; silicon dioxide thin film; Circuit simulation; Conductive films; Dielectrics and electrical insulation; Electrets; Electrons; Fabrication; Microphones; Semiconductor films; Silicon compounds; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location
Las Vegas, NV, USA
ISSN
1084-6999
Print_ISBN
0-7803-7185-2
Type
conf
DOI
10.1109/MEMSYS.2002.984259
Filename
984259
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