Title :
VSET/RESET and VPGM generator without boosting dead time for 3D-ReRAM and NAND flash hybrid solid-state drives
Author :
Hatanaka, Teruyoshi ; Takeuchi, Ken
Author_Institution :
Dept. of Electr., Electron., & Commun. Eng., Chuo Univ., Tokyo, Japan
Abstract :
A single-inductor, dual-output, parallel-boosting (SIDOPB) boost converter which simultaneously outputs 3V for ReRAM program VSET/RESET, 20V for NAND flash program VPGM, is proposed for a hybrid ReRAM and NAND flash 3D-integrated solid-state drive (SSD). Simultaneous boosting of two programming voltages is experimentally demonstrated without boosting dead time for the first time. Interference between ReRAM and NAND boosters is suppressed by the inductor design. There is no additional power increase or the performance degradation compared with the conventional boost converter using double-coil SSD. The area is reduced by 15%.
Keywords :
NAND circuits; convertors; flash memories; inductors; random-access storage; 3D-ReRAM; NAND boosters; NAND flash 3D- integrated solid-state drive; NAND flash 3D-integrated SSD; NAND flash hybrid solid-state drives; NAND flash program; ReRAM boosters; SIDOPB boost converter; dead time; double-coil SSD; hybrid ReRAM; inductor design; single-inductor dual-output parallel-boosting boost converter; voltage 20 V; voltage 3 V;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
Conference_Location :
Kobe
DOI :
10.1109/IPEC.2012.6522687