Reliability testing of single diffused planar InP/InGaAs avalanche photodiodes

Author

Jung, Jihoun ; Kwon, Yong Hwan ; Hyun, Kyung Sook ; Yun, Ilgu

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2002

fDate

2002

Firstpage

193

Lastpage

194

Abstract

This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250°C. The reliability is examined by accelerated life tests for monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show sufficient reliability for practical 10-Gb/s optical receivers.

Keywords

III-V semiconductors; ageing; avalanche photodiodes; gallium arsenide; indium compounds; life testing; optical receivers; semiconductor device breakdown; semiconductor device reliability; 10 Gbit/s; 200 to 250 degC; APD lifetime; InP-InGaAs; accelerated life tests; avalanche photodiodes; bias-temperature tests; breakdown voltage monitoring; commercial optical receiver application; dark current monitoring; degradation activation energy; long-term reliability; reliability testing; single diffused planar APD; Avalanche photodiodes; Dark current; Indium gallium arsenide; Indium phosphide; Life estimation; Life testing; Lifetime estimation; Monitoring; Optical receivers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 2002. IEMT 2002. 27th Annual IEEE/SEMI International

Print_ISBN

0-7803-7301-4

Type

conf

DOI

10.1109/IEMT.2002.1032752

Filename

1032752