DocumentCode
2253686
Title
RF power potential of HEMTs
Author
Berroth, Manfred
Author_Institution
Inst. for Electr. & Optical Commun. Eng., Stuttgart Univ., Germany
fYear
1997
fDate
6-11 Jan 1997
Firstpage
7
Lastpage
10
Abstract
The growing demand for mobile communication is not only driven by hand-held phones. Wireless local area network and personal digital assistants are also requiring high frequency power amplifiers with high power added efficiency. Even higher frequencies of operation are required for base station interlinks and sensor applications like automotive collision avoidance radar. Several watts of output power at millimeter wave frequencies is a very demanding target with the high electron mobility transistor (HEMT) as the most promising candidate. In this paper the present status of millimeter wave transistors and circuits as well as future applications are discussed
Keywords
millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power amplifiers; power field effect transistors; EHF; HEMTs; MM-wave power FETs; RF power potential; high electron mobility transistor; millimeter wave transistors; HEMTs; MODFETs; Millimeter wave circuits; Millimeter wave communication; Millimeter wave radar; Millimeter wave transistors; Mobile communication; Personal digital assistants; Radio frequency; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location
Puerto de la Cruz
Print_ISBN
0-7803-4059-0
Type
conf
DOI
10.1109/WOFE.1997.621133
Filename
621133
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