• DocumentCode
    2253686
  • Title

    RF power potential of HEMTs

  • Author

    Berroth, Manfred

  • Author_Institution
    Inst. for Electr. & Optical Commun. Eng., Stuttgart Univ., Germany
  • fYear
    1997
  • fDate
    6-11 Jan 1997
  • Firstpage
    7
  • Lastpage
    10
  • Abstract
    The growing demand for mobile communication is not only driven by hand-held phones. Wireless local area network and personal digital assistants are also requiring high frequency power amplifiers with high power added efficiency. Even higher frequencies of operation are required for base station interlinks and sensor applications like automotive collision avoidance radar. Several watts of output power at millimeter wave frequencies is a very demanding target with the high electron mobility transistor (HEMT) as the most promising candidate. In this paper the present status of millimeter wave transistors and circuits as well as future applications are discussed
  • Keywords
    millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power amplifiers; power field effect transistors; EHF; HEMTs; MM-wave power FETs; RF power potential; high electron mobility transistor; millimeter wave transistors; HEMTs; MODFETs; Millimeter wave circuits; Millimeter wave communication; Millimeter wave radar; Millimeter wave transistors; Mobile communication; Personal digital assistants; Radio frequency; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
  • Conference_Location
    Puerto de la Cruz
  • Print_ISBN
    0-7803-4059-0
  • Type

    conf

  • DOI
    10.1109/WOFE.1997.621133
  • Filename
    621133