A study of multi-stack silicon-direct wafer bonding for MEMS manufacturing

Author

Miki, N. ; Zhang, X. ; Khanna, R. ; Ayon, A.A. ; Ward, D. ; Spearing, S.M.

Author_Institution

Gas Turbine Lab., MIT, Cambridge, MA, USA

fYear

2002

fDate

24-24 Jan. 2002

Firstpage

407

Lastpage

410

Abstract

Multi-stack wafer bonding is one of the most promising fabrication techniques for creating three-dimensional microstructures, such as for power MEMS devices. However, there are several bonding issues that MEMS technologists have to face and overcome to successfully build multilayered structures. Among these are: (1) Chemical residues on surfaces to be bonded originating from the fabrication processes prior to bonding, (2) Increased stiffness due to multiple bonded wafers and/or thick wafers, (3) Bonding tool effects, and (4) Defect propagation to other wafer levels after high-temperature annealing cycles. The problems and the solutions presented here are readily applicable to any MEMS project involving the fabrication of multi-stack structures of two or more wafers containing intricate geometries and large etched areas.

Keywords

annealing; elemental semiconductors; micromechanical devices; silicon; surface contamination; wafer bonding; MEMS manufacturing; Si; bonding tool; defect propagation; fabrication technique; high-temperature annealing; multi-stack silicon-direct wafer bonding; multilayered structure; power MEMS device; stiffness; surface contamination; three-dimensional microstructure; Annealing; Chemical processes; Chemical technology; Etching; Fabrication; Geometry; Microelectromechanical devices; Micromechanical devices; Microstructure; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on

Conference_Location

Las Vegas, NV, USA

ISSN

1084-6999

Print_ISBN

0-7803-7185-2

Type

conf

DOI

10.1109/MEMSYS.2002.984289

Filename

984289