DocumentCode :
2253886
Title :
Mechanical characterization of sub-micrometer thick DLC films by AFM tensile testing for surface modification in MEMS
Author :
Isono, Y. ; Namazu, T. ; Terayama, N. ; Tanaka, T.
Author_Institution :
Dept. of Mech. Eng., Ritusmeikan Univ., Shiga, Japan
fYear :
2002
fDate :
24-24 Jan. 2002
Firstpage :
431
Lastpage :
434
Abstract :
This paper describes mechanical properties of Diamond-like Carbon (DLC) films for the protection of MEMS against their friction and wear. The compact tensile tester operated in atomic force microscope (AFM) was developed in this research to evaluate Young´s modulus, Poisson´s ratio and fracture strength of DLC films. Single crystal silicon (SCS) and DLC coated SCS (DLC/SCS) specimens on a micrometer scale were used in the tests. The DLC films with thickness of 0.2 and 0.3 /spl mu/m were deposited on 20 /spl mu/m-thick SCS specimens by Plasma-enhanced Chemical Vapor Deposition (PE-CVD) method of the hot cathode Penning Ionization Gauge (PIG) discharge type. The AFM tensile test and nano-indentation test were revealed that Young´s modulus and Poisson´s ratio of the DLC films ranged from 99 GPa to 112 GPa, and from 0.36 to 0.46, respectively.
Keywords :
Poisson ratio; Young´s modulus; atomic force microscopy; carbon; fracture toughness; indentation; micromechanical devices; plasma CVD coatings; tensile testing; wear resistant coatings; AFM tensile testing; C; MEMS; Poisson ratio; Si; Young´s modulus; diamond-like carbon film; fracture strength; friction protection; hot cathode Penning Ionization Gauge discharge; mechanical properties; nano-indentation; plasma-enhanced chemical vapor deposition; single crystal silicon; surface modification; wear protection; Atomic force microscopy; Chemical vapor deposition; Diamond-like carbon; Friction; Mechanical factors; Micromechanical devices; Plasma chemistry; Protection; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
ISSN :
1084-6999
Print_ISBN :
0-7803-7185-2
Type :
conf
DOI :
10.1109/MEMSYS.2002.984295
Filename :
984295
Link To Document :
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