Title :
Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells
Author :
Xu, Guibao ; Sun, Guan ; Ding, Yujie J. ; Zhao, Hongping ; Liu, Guangyu ; Zhang, Jing ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We have observed peculiar behaviors on the dependence of photoluminescence emission peak on excitation fluence in InGaN/GaN multiple quantum wells.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; spectral line shift; wide band gap semiconductors; InGaN-GaN; InGaN-GaN multiple quantum wells; blueshift; excitation fluence; photoluminescence emission peak; Electric fields; Gallium nitride; Photoluminescence; Photonic band gap; Quantum well devices; Temperature distribution; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
