Title :
Reduction of efficiency droop in Semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates
Author :
Chiu, C.H. ; Lin, D.W. ; Lin, C.C. ; Li, Z.Y. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Liao, W.T. ; Tanikawa, T. ; Honda, Y. ; Yamaguchi, M. ; Sawaki, N.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; silicon; wide band gap semiconductors; InGaN-GaN; Si; efficiency droop reduction; electron overflow; polarization field reduction; semipolar light emitting diodes; Films; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
