DocumentCode
2255102
Title
InGaAs diode laser system for the generation of 480 fs long pulses with 340 W peak power
Author
Ulm, Thorsten ; Harth, Florian ; Huillier, Johannes A L ; Wallenstein, Richard
Author_Institution
Tech. Univ. of Kaiserslautern, Kaiserslautern
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
480 fs long pulses with 340 W peak power are generated with an InGaAs diode laser MOPA system and a grating compressor, without stretching the pulses before amplification as required in commonly used CPA systems.
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser beams; optical materials; optical pulse compression; optical pulse generation; semiconductor lasers; InGaAs; InGaAs diode laser system; MOPA system; grating compressor; power 340 W; pulse generation; time 480 fs; Diode lasers; Gratings; Indium gallium arsenide; Laser mode locking; Optical pulse generation; Optical resonators; Power generation; Pulse amplifiers; Pulse compression methods; Semiconductor optical amplifiers; (140.2020) diode lasers; (140.4050) mode locked lasers; (320.5520) pulse compression; (320.7090) ultrafast lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572270
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