DocumentCode :
2255247
Title :
A CMOS Low Drop out Voltage Regulator
Author :
Crepaldi, Paulo ; Pimenta, Tales ; Moreno, Robson
Author_Institution :
Univ. Fed. de Itajuba, Itajuba, Brazil
fYear :
2010
fDate :
19-22 Dec. 2010
Firstpage :
208
Lastpage :
211
Abstract :
This work presents the implementation of a CMOS Linear Voltage Regulator (LVR) used to power up bio-implanted systems. The topology is based on a classical structure of a Low Dropout Regulator (LDO) and receives his activation energy from a RF link characterizing a passive RFID tag. The LVR was designed to achieve important features like low power consumption, and a small silicon area without the need for any external discrete components. The low power operation represents an essential condition to avoid a high energy RF link, thus minimizing the power of the transmitter and the thermal effects on the patient tissues. The project was implemented in a 0.35μm CMOS process and a prototype was tested to validate the overall performance. The LVR output is regulated at 1V and supplies a maximum load current of 0.5mA @ 37°C. The load regulation is 13mV/mA and the line regulation is 39mV/V. The LVR total power consumption is 1.2mW.
Keywords :
CMOS integrated circuits; low-power electronics; power consumption; prosthetic power supplies; radio links; radio transmitters; radiofrequency identification; voltage regulators; CMOS linear voltage regulator; CMOS low drop out voltage regulator; CMOS process; LDO; LVR output; activation energy; bio-implanted systems; current 0.5 mA; high energy RF link; line regulation; load regulation; low power consumption; low power operation; maximum load current; passive RFID tag; patient tissues; power 1.2 mW; size 0.35 mum; temperature 37 C; thermal effects; topology; transmitter; voltage 1 V; CMOS integrated circuits; MOSFETs; Power demand; Regulators; Topology; Voltage control; Implanted Device; Linear Voltage Regulator; RFID;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
Type :
conf
DOI :
10.1109/ICM.2010.5696118
Filename :
5696118
Link To Document :
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