Title :
WiMAX/LTE receiver front-end in 90nm CMOS
Author :
Rodriguez, S. ; Rusu, A. ; Ismail, M.
Author_Institution :
ECS, R. Inst. of Technol. (KTH), Stockholm, Sweden
Abstract :
RFIC design using low-voltage nanometer CMOS technologies offers both advantages and challenges. This paper describes the limitations of using these technologies in receiver front-end design and proposes circuit solutions. Several techniques such as wideband noise reduction, inductoreless peaking, passive mixing, and low flicker noise amplification are reviewed and employed. A receiver front-end that covers 700 MHz-6 Ghz and supports the WiMAX/LTE standards is designed based on these circuit solutions. The front-end is designed using 1.2 V 90 nm CMOS and consumes a total power of 10.2 mW. The total gain is 32 dB, noise figure is 4 dB, flicker noise corner is 10 kHz, and third order intercept point is -10 dBm/0 dBm.
Keywords :
CMOS integrated circuits; WiMax; flicker noise; nanotechnology; radio receivers; radiofrequency integrated circuits; CMOS; LTE receiver front-end; RFIC design; WiMAX; frequency 700 MHz to 6 GHz; gain 32 dB; inductoreless peaking; low flicker noise amplification; low-voltage nanometer CMOS technologies; noise figure 4 dB; passive mixing; size 90 nm; voltage 1.2 V; wideband noise reduction; 1f noise; Bandwidth; CMOS technology; Circuits; Frequency; Linearity; Noise figure; Receivers; Transceivers; WiMAX;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5117936
