DocumentCode :
2255402
Title :
Novel high efficiency low ripple charge pump using variable frequency modulation
Author :
Mingyang, Chen ; WuXiaobo ; Menglian, Zhao
Author_Institution :
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
fYear :
2010
fDate :
19-22 Dec. 2010
Firstpage :
228
Lastpage :
231
Abstract :
A novel charge pump with variable frequency modulation (VFM) is proposed in this paper. To provide base for its design and improvement, detailed models for VFM charge pump are derived. And it is successfully implemented for the charge pump to introduce a voltage controlled oscillator (VCO) to control the switching frequency, which results in its high efficiency and low ripple output both at high load and light load. The chip is designed and fabricated in TSMC 0.35um mixed signal process. The simulation and test results show that high efficiency (up to 75%) and very low ripple output ( around 10 mV) is realized as expected. Besides, the accuracy of the model´s prediction is proved.
Keywords :
charge pump circuits; frequency modulation; voltage-controlled oscillators; TSMC mixed signal process; high efficiency; low ripple charge pump; size 0.35 mum; switching frequency; variable frequency modulation; voltage controlled oscillator; charge pump; high efficiency; low ripple;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
Type :
conf
DOI :
10.1109/ICM.2010.5696124
Filename :
5696124
Link To Document :
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