Modeling of electronic transport in metallic carbon nanotube interconnects

Metallic carbon nanotubes are being considered as a candidate for to potentially replace Copper as an interconnect material in future generation integrated circuits. In this paper we examine electronic transport behavior in metallic carbon nanotubes using a self consistent non equilibrium Green´s function (NEGF) methodolgy including effects of electron phonon interactions Results show that conductivity is seen to decrease in the ballistic limit due to localized disorder effects even with a weak disorder potential. We were also able to show that optical phonons (LO/TO modes) are the dominant mechanisms that govern the mean free path of conduction. Our calculations show an excellent match with experiement.