DocumentCode
2255597
Title
Switching performance for fabricated and simulated 4H-SiC high power bipolar transistors
Author
Danielsson, E. ; Zetterling, C.-M. ; Domeij, M. ; Östling, M. ; Forsberg, U. ; Janzén, E.
Author_Institution
Dept. of Microelectron. & Inf. Technol., KTH, Kista, Sweden
fYear
2001
fDate
2001
Firstpage
5
Lastpage
8
Abstract
Summary form only given. In this paper, the switching performance of a SiC bipolar transistor was presented. The transistors had a static current gain of approximately 9 at room temperature. Switch frequencies up to 1 MHz and 300 V were tested with a resistive load of 1 kΩ, which the SiC BJT managed well. The breakdown voltage was around 400 V, which is 25% of the ideal breakdown voltage.
Keywords
bipolar transistor switches; power bipolar transistors; power semiconductor switches; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1 MHz; 300 V; 400 V; 4H-SiC bipolar transistors; SiC; SiC bipolar transistor; breakdown voltage; high power bipolar transistors; static current gain; switch frequencies; switching performance; Bipolar transistors; Breakdown voltage; Current measurement; Doping; Electric breakdown; Frequency measurement; Gain measurement; Power measurement; Silicon carbide; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984425
Filename
984425
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