DocumentCode
2255641
Title
On signalling over Through-Silicon Via (TSV) interconnects in 3-D Integrated Circuits
Author
Weerasekera, Roshan ; Grange, Matt ; Pamunuwa, Dinesh ; Tenhunen, Hannu
Author_Institution
Centre for Microsyst. Eng., Lancaster Univ., Lancaster, UK
fYear
2010
fDate
8-12 March 2010
Firstpage
1325
Lastpage
1328
Abstract
This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted.
Keywords
SPICE; crosstalk; integrated circuit interconnections; 3D integrated circuits; Spice simulations; current-mode signalling; jitter reduction; reduced-order electrical model; signal integrity; through-silicon via interconnects; voltage-mode signalling; Circuit simulation; Crosstalk; Delay effects; Integrated circuit interconnections; Measurement; Silicon; Three-dimensional integrated circuits; Through-silicon vias; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location
Dresden
ISSN
1530-1591
Print_ISBN
978-1-4244-7054-9
Type
conf
DOI
10.1109/DATE.2010.5457013
Filename
5457013
Link To Document