Title :
Technology and production of HBT epitaxial material
Author :
Streit, D.C. ; Oki, A.K. ; Block, T.R. ; Lammert, D. ; Hoppe, M.M. ; Umemoto, D.K. ; Wojtowicz, M.
Author_Institution :
Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report sustained high-yield, high-volume production of HBT epitaxial material and devices for commercial applications. We also report the use of nondestructive material characterization to predict the performance of the fabricated devices.
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; integrated circuit testing; integrated circuit yield; molecular beam epitaxial growth; nondestructive testing; HBT chips; HBT epitaxial devices; HBT epitaxial material production; HBT epitaxial material technology; commercial applications; nondestructive material characterization; performance; Costs; FETs; Heterojunction bipolar transistors; Materials reliability; Microwave devices; Molecular beam epitaxial growth; Optical noise; Production; Space technology; Voltage;
Conference_Titel :
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-3318-7
DOI :
10.1109/MTTTWA.1997.595126
