DocumentCode
2255646
Title
Technology and production of HBT epitaxial material
Author
Streit, D.C. ; Oki, A.K. ; Block, T.R. ; Lammert, D. ; Hoppe, M.M. ; Umemoto, D.K. ; Wojtowicz, M.
Author_Institution
Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA
fYear
1997
fDate
23-26 Feb. 1997
Firstpage
126
Lastpage
128
Abstract
We report sustained high-yield, high-volume production of HBT epitaxial material and devices for commercial applications. We also report the use of nondestructive material characterization to predict the performance of the fabricated devices.
Keywords
bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; integrated circuit testing; integrated circuit yield; molecular beam epitaxial growth; nondestructive testing; HBT chips; HBT epitaxial devices; HBT epitaxial material production; HBT epitaxial material technology; commercial applications; nondestructive material characterization; performance; Costs; FETs; Heterojunction bipolar transistors; Materials reliability; Microwave devices; Molecular beam epitaxial growth; Optical noise; Production; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location
Vancouver, BC, Canada
Print_ISBN
0-7803-3318-7
Type
conf
DOI
10.1109/MTTTWA.1997.595126
Filename
595126
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