Title :
Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode
Author :
Alexandrov, P. ; Wright, W. ; Pan, M. ; Weiner, M. ; Jiao, L. ; Zhao, J.H.
Author_Institution :
New Brunswick Tech Center, United Silicon Carbide Inc., New Brunswick, NJ, USA
Abstract :
DC and transient test results of high power, fast recovery 4H-SiC MPS diodes using multi-step junction termination (MJTE) designs are presented. The MJTE design allows full utilization of the superior breakdown properties of SiC. 4H-SiC MPS diode DC properties were studied and the transient properties were obtained by using an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T). Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charge in the diodes and substantial reduction in diode turn-off energy loss, especially at high-T.
Keywords :
Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 140 A; 4H-SiC diodes; 800 V; DC properties; PIN/Schottky diode; SiC; breakdown properties; diode turn-off energy loss reduction; fast recovery diodes; high power diodes; inductively-loaded half-bridge inverter circuit; multi-step junction termination designs; p-i-n/Schottky barrier diodes; transient properties; Circuit testing; Electric breakdown; Energy storage; Inverters; P-i-n diodes; PIN photodiodes; Schottky barriers; Schottky diodes; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984427
