DocumentCode :
2255657
Title :
Design and fabrication of 4H-SiC APD linear arrays
Author :
Yan, Feng ; Qin, Chao ; Zhao, Jian H. ; Bush, Mike ; Olsen, Gregory
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2001
fDate :
2001
Firstpage :
17
Lastpage :
20
Abstract :
The photodetector linear array is an important technology for spectroscopic and imaging applications. In the visible blind UV region, 4H-SiC is a promising candidate for a linear array because of its high reliability and commercial availability of large area substrates. The 4H-SiC visible blind avalanche photodiodes (APDs) have been demonstrated, making it possible to demonstrate -visible blind APD linear array for applications where the UV signal is weak. In this paper, we present the detailed design and fabrication issues. Detailed characterizations results and suggestions for further improvement and potential applications are also presented.
Keywords :
arrays; avalanche photodiodes; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC APD linear arrays; APD array characterization; APD linear array; SiC; UV avalanche photodiodes; fabrication; large area substrates; visible blind UV region; Availability; Avalanche photodiodes; Chaos; Fabrication; Fasteners; Optical imaging; Optical sensors; Photodetectors; Silicon carbide; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984428
Filename :
984428
Link To Document :
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