DocumentCode :
2255673
Title :
Experimental results on power efficient single-poly floating gate rectifiers
Author :
Peters, Christian ; Handwerker, Jonas ; Henrici, Fabian ; Ortmanns, Maurits ; Manoli, Yiannos
Author_Institution :
Dept. of Microsyst. Eng. (IMTEK), Univ. of Freiburg, Freiburg, Germany
fYear :
2009
fDate :
24-27 May 2009
Firstpage :
1097
Lastpage :
1100
Abstract :
This paper presents measurement results on voltage and power efficient CMOS fully integrated rectifiers. Floating gate (FG) techniques are used to reduce the threshold voltage and thus the voltage drop over the rectifier. A three transistor single-poly FG diode is presented as basic element for half and full wave rectifiers. The rectifiers are implemented using a 0.35 mum high voltage CMOS technology. Measurements show a significantly higher output voltage and efficiency using programmed FG devices compared to non-programmed. Power efficiencies of up to 75% and 66% are measured for low and high voltage devices, respectively. The minimum operational input voltage of high voltage rectifiers is drastically reduced.
Keywords :
CMOS analogue integrated circuits; rectifying circuits; solid-state rectifiers; CMOS integrated rectifier; floating gate techniques; full wave rectifier; half wave rectifier; power efficient single poly floating gate rectifiers; single poly floating gate diode; size 0.35 mum; threshold voltage; CMOS process; CMOS technology; Diodes; EPROM; Frequency; Low voltage; Power measurement; Rectifiers; Telemetry; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
Type :
conf
DOI :
10.1109/ISCAS.2009.5117951
Filename :
5117951
Link To Document :
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