Experimental results on power efficient single-poly floating gate rectifiers

This paper presents measurement results on voltage and power efficient CMOS fully integrated rectifiers. Floating gate (FG) techniques are used to reduce the threshold voltage and thus the voltage drop over the rectifier. A three transistor single-poly FG diode is presented as basic element for half and full wave rectifiers. The rectifiers are implemented using a 0.35 mum high voltage CMOS technology. Measurements show a significantly higher output voltage and efficiency using programmed FG devices compared to non-programmed. Power efficiencies of up to 75% and 66% are measured for low and high voltage devices, respectively. The minimum operational input voltage of high voltage rectifiers is drastically reduced.