A highly efficient interleaved DC-DC converter using coupled inductors in gaas technology

Author

Peng, Han ; Chow, T.P. ; Hella, Mona

Author_Institution

ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2009

fDate

24-27 May 2009

Firstpage

1105

Lastpage

1108

Abstract

This paper presents a high power efficiency DC-DC buck converter in Gallium Arsenide technology targeting integrated power amplifier modules. The buck converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency for a given duty cycle with a minimum penalty on current ripple performance. The DC-DC converter is implemented in 0.5 mum GaAs pHEMT process and occupies 2.7times2.7 mm² without the output network. It converts 4.5 V input to 3.3 V output for 1 A load current under 250 MHz switching frequency with a power efficiency of 86.1%.

Keywords

DC-DC power convertors; III-V semiconductors; gallium arsenide; high electron mobility transistors; inductors; power amplifiers; GaAs; III-V technologies; coupled inductors; current 1 A; efficiency 86.1 percent; frequency 250 MHz; integrated power amplifier modules; interleaved DC-DC converter; pHEMT process; size 0.5 mum; voltage 3.3 V; voltage 4.5 V; CMOS technology; Coupling circuits; DC-DC power converters; Filters; Gallium arsenide; Inductors; Power amplifiers; Steady-state; Switching frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on

Conference_Location

Taipei

Print_ISBN

978-1-4244-3827-3

Electronic_ISBN

978-1-4244-3828-0

Type

conf

DOI

10.1109/ISCAS.2009.5117953

Filename

5117953