First-pass design strategy for high-power amplifiers at X-band

A design strategy is presented for the development of high-power high-efficiency GaAs MMIC amplifiers at microwave frequencies. The presented design strategy results in a short design time and guarantees a first pass success. The design method addressed includes proper transistor size selection, transistor characterisation at high-power conditions under optimum load conditions, large-signal parameter extraction, broadband matching techniques, stability analysis and high-speed simulation of the passive matching networks with the accuracy of electro-magnetic simulations. The design method is illustrated with several examples of broadband MESFET and HEMT amplifiers at X-band