Physical parametric analysis of 16nm n-channel Carbon-Nanotube transistors for manufacturability

Author

Sun, Yanan ; Kursun, Volkan

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2010

fDate

19-22 Dec. 2010

Firstpage

28

Lastpage

31

Abstract

Carbon-Nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm N-type CN-MOSFETs are explored in this paper. The optimum high-speed N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio (I_on/I_off) with a high substrate (bottom gate) bias voltage. Technology development guidelines for achieving high-speed, area efficient, and manufacturable integrated circuits are provided.

Keywords

MOSFET; carbon nanotubes; carbon nanotube MOSFET; manufacturability; manufacturable integrated circuit; n-channel carbon-nanotube transistor; physical parametric analysis; technology development guidelines; Carbon nanotubes; Degradation; Electron tubes; Logic gates; Performance evaluation; Transistors; CN-MOSFET; charge screening effect; chirality vector; maximum on current; optimum diameter; technology development;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2010 International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-61284-149-6

Type

conf

DOI

10.1109/ICM.2010.5696141

Filename

5696141