DocumentCode :
2255808
Title :
Physical parametric analysis of 16nm n-channel Carbon-Nanotube transistors for manufacturability
Author :
Sun, Yanan ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2010
fDate :
19-22 Dec. 2010
Firstpage :
28
Lastpage :
31
Abstract :
Carbon-Nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm N-type CN-MOSFETs are explored in this paper. The optimum high-speed N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio (Ion/Ioff) with a high substrate (bottom gate) bias voltage. Technology development guidelines for achieving high-speed, area efficient, and manufacturable integrated circuits are provided.
Keywords :
MOSFET; carbon nanotubes; carbon nanotube MOSFET; manufacturability; manufacturable integrated circuit; n-channel carbon-nanotube transistor; physical parametric analysis; technology development guidelines; Carbon nanotubes; Degradation; Electron tubes; Logic gates; Performance evaluation; Transistors; CN-MOSFET; charge screening effect; chirality vector; maximum on current; optimum diameter; technology development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
Type :
conf
DOI :
10.1109/ICM.2010.5696141
Filename :
5696141
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2255808
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