• DocumentCode
    2255822
  • Title

    Memristor based STDP learning network for position detection

  • Author

    Ebong, Idongesit ; Mazumder, Pinaki

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • fDate
    19-22 Dec. 2010
  • Firstpage
    292
  • Lastpage
    295
  • Abstract
    Most neural networks have a basic competitive learning rule on top of a more involved processing algorithm. This work highlights three basic learning rules - winner-take-all (WTA), spike timing dependent plasticity (STDP), and inhibition of return (IOR). It also gives a design example implementing WTA combined with STDP in a position detector. A CMOS and an MMOST (Memristor-MOS Technology) design simulation results are compared on the bases of power, area, and noise handling capabilities. Design and layout was done in 130 nm IBM process for CMOS, and the HSPICE model files for the process were used to simulate the CMOS part of the MMOST design. CMOS consumes 2.9×10-4cm2 area, 55 μW max power, and requires a 3 dB SNR. On the other hand, the MMOST design consumes 6×10-5cm2, 15 μW max power, and requires a 4.8 dB SNR.
  • Keywords
    CMOS integrated circuits; SPICE; integrated circuit layout; learning (artificial intelligence); memristors; neural nets; position measurement; CMOS design simulation; HSPICE model; IBM process; MMOST design simulation; competitive learning rule; inhibition-of-return; layout; memristor-MOS technology design simulation; neural networks; position detection; position detector; processing algorithm; spike timing dependent plasticity; winner-take-all; Biological system modeling; CMOS integrated circuits; Computational modeling; Neurons; Semiconductor device modeling; Synchronization; Neural network applications; neural networks; spike timing dependent plasticity; unsupervised learning; winner-take-all;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2010 International Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-61284-149-6
  • Type

    conf

  • DOI
    10.1109/ICM.2010.5696142
  • Filename
    5696142