Title :
A Single Electron Artificial Neural Network (ANN) Majority Logic Gate (MLG)
Author :
Rehan, Sameh Ebrahim
Author_Institution :
Commun. & Electron. Eng. Dept., Mansoura Univ., Mansoura, Egypt
Abstract :
The Single Electron Nano-Devices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Linear Threshold Gate (LTG) SEND is reviewed. An Artificial Neural Network (ANN) Majority Logic Gate (MLG) with 3 inputs (MLG3) is proposed. The MLGs with three and four inputs are implemented using LTG and SET inverter SENDs. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results of these MLGs are included.
Keywords :
logic gates; majority logic; neural nets; single electron transistors; SIMON 2.0 simulation; linear threshold gate; majority logic gate; single electron artificial neural network; single electron nano-device; Artificial Neural Network (ANN); Linear Threshold Gate (LTG); Majority Logic Gate (MLG); SIMON 2.0.; Single Electron (SE); Single Electron Box (SEB); Single Electron NanoDevices (SENDs); Single Electron Transistor (SET);
Conference_Titel :
Microelectronics (ICM), 2010 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-61284-149-6
DOI :
10.1109/ICM.2010.5696146