DocumentCode :
2255998
Title :
Giant light-modulated permittivity of Pb0.74Sn0.26 Te<In> narrow band-gap isolator: new approach to relaxation processes and potential applications
Author :
Klimov, Alexander ; Shumsky, Vladimir
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
fYear :
2001
fDate :
2001
Firstpage :
63
Lastpage :
66
Abstract :
Experimental results on ε=2,000-300,000 are given and discussed. For the first time high modulation of ε (about two orders) of Pb0.74Sn0.26Te<In> by an illumination and electrical field was observed
Keywords :
IV-VI semiconductors; indium; lead compounds; narrow band gap semiconductors; permittivity; photodielectric effect; tin compounds; Pb0.74Sn0.26Te:In; electric field; light-modulated permittivity; narrow band-gap semiconductor; photodielectric effect; relaxation process; Capacitance; Helium; Isolators; Lighting; Permittivity; Photonic band gap; Shape; Tellurium; Temperature dependence; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984439
Filename :
984439
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2255998
بازگشت