• DocumentCode
    2255998
  • Title

    Giant light-modulated permittivity of Pb0.74Sn0.26 Te<In> narrow band-gap isolator: new approach to relaxation processes and potential applications

  • Author

    Klimov, Alexander ; Shumsky, Vladimir

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    Experimental results on ε=2,000-300,000 are given and discussed. For the first time high modulation of ε (about two orders) of Pb0.74Sn0.26Te<In> by an illumination and electrical field was observed
  • Keywords
    IV-VI semiconductors; indium; lead compounds; narrow band gap semiconductors; permittivity; photodielectric effect; tin compounds; Pb0.74Sn0.26Te:In; electric field; light-modulated permittivity; narrow band-gap semiconductor; photodielectric effect; relaxation process; Capacitance; Helium; Isolators; Lighting; Permittivity; Photonic band gap; Shape; Tellurium; Temperature dependence; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984439
  • Filename
    984439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2255998