Ge quantum dots on ZnSe/GaAs

Author

Suprun, S.P. ; Shumsky, V.N. ; Talochkin, A.B. ; Fedosenko, E.V.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2001

fDate

2001

Firstpage

71

Lastpage

74

Abstract

For the first time systems of Ge quantum dots were formed using MBE on unstrained heterostructure ZnSe/GaAs. The mechanisms of the formation QDs would be characterized the weak chemical interaction between Ge and ZnSe substrate in comparison surface energy of Ge. Low temperature of epitaxy and so the small magnitude the Ge diffusion length on the surface and the absence of elastic stress fields are reasoned the high density of the islands. Geometrical parameters and electronic structure of the islands were studied with scanning tunnel microscopy and Raman spectroscopy

Keywords

II-VI semiconductors; III-V semiconductors; Raman spectra; elemental semiconductors; gallium arsenide; germanium; island structure; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor heterojunctions; semiconductor quantum dots; zinc compounds; Ge; Ge quantum dot; MBE growth; Raman spectroscopy; ZnSe-GaAs; ZnSe/GaAs heterostructure; diffusion length; elastic stress field; electronic structure; island density; low temperature epitaxy; scanning tunnel microscopy; Chemicals; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Quantum dots; Scanning electron microscopy; Stress; Substrates; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984441

Filename

984441