Ge quantum dots on ZnSe/GaAs

For the first time systems of Ge quantum dots were formed using MBE on unstrained heterostructure ZnSe/GaAs. The mechanisms of the formation QDs would be characterized the weak chemical interaction between Ge and ZnSe substrate in comparison surface energy of Ge. Low temperature of epitaxy and so the small magnitude the Ge diffusion length on the surface and the absence of elastic stress fields are reasoned the high density of the islands. Geometrical parameters and electronic structure of the islands were studied with scanning tunnel microscopy and Raman spectroscopy