Preparation of phosphorous doping to beta-iron disilicide thin films and application for devices

Author

Ehara, Takashi ; Nakagomi, Shinji ; Kokubun, Yoshihiro

Author_Institution

Sch. of Sci. & Eng., Ishinomaki Senshu Univ., Miyagi, Japan

fYear

2001

fDate

2001

Firstpage

83

Lastpage

84

Abstract

In the present work, preparation and device applications of phosphorous doped β-FeSi₂ are described. Optical bandgap and conductivity of undoped and phosphorus doped β-FeSi₂ thin films prepared by RF sputtering are measured. In addition, typical current-voltage characteristics of phosphorous-doped β-FeSi₂/p-type Si substrate heterojunctions are shown

Keywords

electrical conductivity; energy gap; iron compounds; optical constants; phosphorus; semiconductor doping; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; sputtered coatings; β-FeSi₂/p-Si heterojunction; FeSi₂-Si; FeSi₂:P; RF sputtering; beta-iron disilicide thin film; current-voltage characteristics; direct band gap semiconductor; electrical conductivity; optical bandgap; phosphorous doping; Conductive films; Conductivity; Doping; Heterojunctions; Iron; Optical films; Photonic band gap; Sputtering; Substrates; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984444

Filename

984444