DocumentCode
2256148
Title
Optical anisotropy in InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation
Author
Park, S.-H. ; Ahn, D. ; Oh, J.E.
Author_Institution
Dept. of Electron. Eng., Catholic Univ. of Daegu, Daegu
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
Keywords
III-V semiconductors; crystal orientation; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; crystal angle; crystal orientation; nonMarkovian gain model; optical anisotropy; quantum-well light-emitting diodes; Anisotropic magnetoresistance; Gallium nitride; Geometrical optics; Light emitting diodes; Optical devices; Optical polarization; Optical saturation; Quantum well devices; Quantum wells; Spontaneous emission; (250.5230) Photoluminescence; (250.5590) Quantum-well,-wire, and-dot devices; (310.5448) Polarization, other optical properties;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572323
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